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High Speed Super Low Power SRAM
32K-Word By 8 Bit
CS18LV02565
6
Rev. 2.0
Chiplus reserves the right to change product or specification without notice.
DC ELECTRICAL CHARACTERISTICS
( TA = 0
o ~70oC, Vcc = 5.0V)
Name
Parameter
Test Condition
MIN
TYP(1)
MAX Unit
VIL
Guaranteed Input Low
Voltage
(2)
Vcc=5.0V
-0.5
1.5
V
VIH
Guaranteed Input High
Voltage
(2)
Vcc=5.0V
2.5
Vcc+0.2
V
IIL
Input Leakage Current
VCC=MAX, VIN=0 to VCC
-1
1
uA
IOL
Output Leakage Current
VCC=MAX, /CE=VIN, or
/OE=VIN , VIO=0V to VCC
-1
1
uA
VOL
Output Low Voltage
VCC=MAX, IOL = 1mA
0.4
V
VOH
Output High Voltage
VCC=MIN, IOH = -1mA
2.2
V
ICC
Operating Power Supply
Current
/CE=VIL, IDQ=0mA,
F=FMAX =1/ tRC
20
mA
ICCSB TTL Standby Supply
/CE=VIH, IDQ=0mA,
1
mA
ICCSB1 CMOS Standby Current
/CE≧VCC-0.2V, VIN≧
VCC-0.2V or VIN≦0.2V,
1.0
4
uA
1. Typical characteristics are at TA = 25
oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
DATA RETENTION CHARACTERISTICS ( TA = 0o ~70oC, Vcc = 5.0V )
Name
Parameter
Test Condition
MIN TYP(1) MAX
Unit
VDR
VCC for Data Retention
/CE ≧ VCC-0.2V, VIN ≧
VCC-0.2V or VIN≦0.2V
1.5
V
ICCDR
Data Retention Current
/CE≧VCC-0.2V, VIN≧
VCC-0.2V or VIN≦0.2V
0.5
3
uA
TCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
Refer to
Retention Waveform
tRC (2)
ns
1. TA = 25
oC.
2.
tRC= .Read Cycle Time.
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