WeEn Semiconductors

Product specification

Rectifier diode

BYC10-600CT

ultrafast, low switching loss

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Dual diode

V

• Extremely fast switching

• Low reverse recovery current

V

F

≤ 1.75 V

• Low thermal resistance

• Reduces switching losses in

I

associated MOSFET

t

APPLICATIONS

PINNING

SOT78 (TO220AB)

• Active power factor correction

PIN

DESCRIPTION

• Half-bridge lighting ballasts

• Half-bridge/ full-bridge switched

1

anode 1

mode power supplies.

2

cathode

The BYC10-600CT is supplied in

the SOT78 (TO220AB)

3

anode 2

conventional leaded package.

tab

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

RRM

Peak repetitive reverse voltage

-

600

V

V

RWM

Crest working reverse voltage

-

600

V

V

R

Continuous reverse voltage

T

mb

≤ 110 ˚C

-

500

V

I

O(AV)

Average output current (both

δ = 0.5; with reapplied V

-

10

A

diodes conducting)

T

mb

I

FRM

Repetitive peak forward current

δ = 0.5; with reapplied V

-

10

A

per diode

T

mb

I

FSM

Non-repetitive peak forward

t = 10 ms

-

40

A

current per diode

t = 8.3 ms

-

44

A

sinusoidal; T

with reapplied V

RWM(max)

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction to

per diode

-

-

2.5

K/W

mounting base

both diodes

-

-

2.2

K/W

R

th j-a

Thermal resistance junction to

in free air.

-

60

-

K/W

ambient

1 T

August 2018

1

Rev 1.

300

1 2

mb

3

sym125

A2

A1

K