WeEn Semiconductors

Product specification

Rectifier diode

BYC10-600CT

ultrafast, low switching loss

Fig.3. Maximum forward dissipation per diode as a

function of average forward current; rectangular

current waveform where I

√D.

Fig.4. Typical reverse recovery switching losses per

diode, as a function of rate of change of current dI

Fig.5. Typical switching losses in transistor due to

reverse recovery of diode, as a function of of change

of current dI

Fig.6. Origin of switching losses in transistor due to

diode reverse recovery.

Fig.7. Typical reverse recovery time t

function of rate of change of current dI

Fig.8. Typical peak reverse recovery current per

diode, I

dI

01

2345

678

0

5

10

15

D = 1.0

0.5

0.2

0.1

BYC5-600

Rs = 0.09 Ohms

Vo = 1.3 V

150

137.5

125

112.5

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) C

D =

T

T

t

I

time

ID

Irrm

VD

dIF/dt

ID = IL

losses due to

diode reverse recovery

100

1000

0

0.05

0.1

0.15

0.2

BYC5-600

f = 20 kHz

Rate of change of current, dIF/dt (A/us)

Diode reverse recovery switching losses, Pdsw (W)

IF = 5 A

10 A

7.5 A

Tj = 125 C

VR = 400 V

100

1000

10

100

BYC5-600

Rate of change of current, dIF/dt (A/us)

Reverse recovery time, trr (ns)

10 A

7.5 A

IF = 5 A

Tj = 125 C

VR = 400 V

100

1000

0

1

2

3

4

5

BYC5-600

Rate of change of current, dIF/dt (A/us)

Transistor losses due to diode reverse recovery, Ptsw (W)

f = 20 kHz

Tj = 125 C

VR = 400 V

IF = 5 A

7.5 A

10 A

100

1000

1

10

100

BYC5-600

Rate of change of current, dIF/dt (A/us)

Peak reverse recovery current, Irrm (A)

Tj = 125 C

VR = 400 V

IF = 5 A

10 A

August 2018

3

Rev 1.

300