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STUSB4710 数据表(PDF) 24 Page - STMicroelectronics |
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STUSB4710 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 34 page ![]() Electrical characteristics STUSB4710 24/34 DocID030499 Rev 4 Symbol Parameter Test conditions Min. Typ. Max. Unit VBUS monitoring and driving VTHUSB VBUS presence threshold 3.8 3.9 4 V VTH0V VBUS safe 0 V threshold (vSafe0V) Programmable threshold (from 0.6 to 1.8 V) Default VTHOV = 0.6 V 0.5 0.6 0.7 V 0.8 0.9 1 1.1 1.2 1.3 1.7 1.8 1.9 RDISUSB VBUS discharge resistor 600 700 800 Ω TDISUSB VBUS discharge time to 0 V Default TDISUSB= 840 ms. The coefficient TDISPARAM is programmable by NVM 70 *TDISPARAM 84 *TDISPARAM 100 *TDISPARAM ms TDISUSB VBUS discharge time to PDO Default TDISUSB= 200 ms The coefficient TDISPARAM is programmable by NVM 20 *TDISPARAM 24 *TDISPARAM 28 *TDISPARAM ms VMONUSBH VBUS monitoring high voltage threshold VBUS = nominal target value Default VMONUSBH = VBUS +10% The threshold limit is programmable by NVM from VBUS +5% to VBUS +20% – VBUS +10% – V VMONUSBL VBUS monitoring low voltage threshold VBUS = nominal target value Default VMONUSBL= VBUS - 10% The threshold limit is programmable by NVM from VBUS -20% to VBUS - 5% – VBUS -10% – V Digital input/output (SCL, SDA) VIH High level input voltage 1.2 – – V VIL Low level input voltage – – 0.35 V VOL Low level output voltage Ioh = 3 mA – – 0.4 V 20 V open-drain outputs (VBUS_EN_SRC) VOL Low level output voltage Ioh = 3 mA – – 0.4 V |
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