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EPC2021 数据表(PDF) 2 Page - Espros Photonics corp |
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EPC2021 数据表(HTML) 2 Page - Espros Photonics corp |
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2 / 6 page ![]() eGaN® FET DATASHEET EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 2 EPC2021 Dynamic Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CISS Input Capacitance VDS = 40 V, VGS = 0 V 1650 1980 pF COSS Output Capacitance 970 1460 CRSS Reverse Transfer Capacitance 20 COSS(ER) Effective Output Capacitance, Energy Related (Note 2) VDS = 0 to 40 V, VGS = 0 V 1090 COSS(TR) Effective Output Capacitance, Time Related (Note 3) 1310 RG Gate Resistance 0.3 Ω QG Total Gate Charge VDS = 40 V, VGS = 5 V, ID = 29 A 15 19 nC QGS Gate-to-Source Charge VDS = 40 V, ID = 29 A 3.4 QGD Gate-to-Drain Charge 2.3 QG(TH) Gate Charge at Threshold 2.5 QOSS Output Charge VDS = 40 V, VGS = 0 V 63 95 QRR Source-Drain Recovery Charge 0 All measurements were done with substrate connected to source. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS. 400 300 200 100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 1: Typical Output Characteristics at 25°C VDS – Drain-to-Source Voltage (V) VGS = 5V VGS = 4V VGS = 3V VGS = 2V VGS – Gate-to-Source Voltage (V) 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 2: Transfer Characteristics 400 300 200 100 0 25˚C 125˚C VDS = 3 V 25˚C 125˚C VDS = 3 V 7 6 5 4 3 2 1 0 2.5 3.0 3.5 4.0 4.5 5.0 VGS – Gate-to-Source Voltage (V) Figure 3: RDS(on) vs. VGS for Various Drain Currents ID = 30 A ID = 60 A ID = 120 A ID = 180 A 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 4: RDS(on) vs. VGS for Various Temperatures VGS – Gate-to-Source Voltage (V) 25˚C 125˚C VDS = 3 V 25˚C 125˚C ID = 29 A 7 6 5 4 3 2 1 0 |
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