PDTC123TMB datasheet(5/12 Pages) NEXPERIA

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PDTC123TMB

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Product data sheet

Rev. 1 — 12 June 2012

4 of 11

NXP Semiconductors

PDTC123TMB

NPN resistor-equipped transistor; R1 = 2.2 k

Ω, R2 = open

Characteristics

[1]

Characteristics of built-in transistor.

FR4 PCB, standard footprint

Fig 3.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE =0A; Tamb = 25 °C

100

ICEO

collector-emitter cut-off

current

VCE =30V; IB =0A; Tamb = 25 °C

--1

µA

VCE =30V; IB =0A; Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A; Tamb = 25 °C

100

hFE

DC current gain

VCE =5V; IC =20 mA; Tamb =25°C

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB = 0.5 mA; Tamb = 25 °C

150

bias resistor 1 (input)

Tamb = 25 °C

1.54

2.2

2.86

Ω

collector capacitance

VCB =10V; IE =0A; ie =0A;

f=1MHz; Tamb =25°C

--2.5

transition frequency

VCE =5V; IC = 10mA; f=100MHz;

Tamb =25°C

[1]

230

MHz

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