PDTC123TMB

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 12 June 2012

5 of 11

NXP Semiconductors

PDTC123TMB

NPN resistor-equipped transistor; R1 = 2.2 k

Ω, R2 = open

Fig 4.

DC current gain as a function of collector

current; typical values

Fig 5.

Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 6.

Collector capacitance as a function of

collector-base voltage; typical values of built-in

transistor

Fig 7.

Transition frequency as a function of collector

current; typical values of built-in transistor

10

1

006aaa696

200

300

100

400

500

0

(1)

(2)

(3)

006aaa697

10

1

1

(V)

(3)

(2)

(1)

050

40

20

30

10

006aad055

1

2

3

(pF)

0

006aac757

10

1

(MHz)

10