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PUSB3F97 数据表(PDF) 8 Page - Nexperia B.V. All rights reserved |
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PUSB3F97 数据表(HTML) 8 Page - Nexperia B.V. All rights reserved |
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8 / 14 page ![]() PUSB3F97 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved. Product data sheet Rev. 1 — 10 May 2017 8 of 14 Nexperia PUSB3F97 ESD protection for ultra high-speed interfaces The device uses an advanced clamping structure showing a negative dynamic resistance. This snap-back behavior strongly reduces the clamping voltage to the system behind the ESD protection during an ESD event. Do not connect unlimited DC current sources to the data lines to avoid keeping the ESD protection device in snap-back state after exceeding breakdown voltage (due to an ESD pulse for instance). IEC 61000-4-5; tp =8/20 s; positive pulse IEC 61000-4-5; tp =8/20 s; negative pulse Fig 11. Dynamic resistance with positive clamping; typical values Fig 12. Dynamic resistance with negative clamping; typical values tp = 100 ns; Transmission Line Pulse (TLP) tp = 100 ns; Transmission Line Pulse (TLP) Fig 13. Dynamic resistance with positive clamping; typical values Fig 14. Dynamic resistance with negative clamping; typical values |
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