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MMBZXAL 数据表(PDF) 6 Page - Nexperia B.V. All rights reserved |
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MMBZXAL 数据表(HTML) 6 Page - Nexperia B.V. All rights reserved |
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6 / 18 page ![]() MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 5 of 17 NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes [1] In accordance with IEC 61643-321 (10/1000 μs current waveform). [2] Measured from pin 1 or 2 to pin 3. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 or 2 to pin 3. Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7. ESD maximum ratings Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] -30 kV machine model [2] -2 kV Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 8 kV Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit |
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