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MMBZXAL 数据表(PDF) 9 Page - Nexperia B.V. All rights reserved

部件名 MMBZXAL
功能描述  Low capacitance unidirectional double ESD protection diodes
PDF  18 Pages
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制造商  NEXPERIA [Nexperia B.V. All rights reserved]
网页  https://www.nexperia.com/
标志 NEXPERIA - Nexperia B.V. All rights reserved

MMBZXAL 数据表(HTML) 9 Page - Nexperia B.V. All rights reserved

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MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
8 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
7.
Characteristics
Table 10.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 10 mA
--0.9
V
VRWM
reverse standoff voltage
MMBZ5V6AL
-
-
3
V
MMBZ6V2AL
-
-
3
V
MMBZ6V8AL
-
-
4.5
V
MMBZ9V1AL
-
-
6
V
MMBZ10VAL
-
-
6.5
V
MMBZ12VAL
-
-
8.5
V
MMBZ15VAL
-
-
12
V
MMBZ18VAL
-
-
14.5
V
MMBZ20VAL
-
-
17
V
MMBZ27VAL
-
-
22
V
MMBZ33VAL
-
-
26
V
IRM
reverse leakage current
MMBZ5V6AL
VRWM = 3 V
-
0.24
5
μA
MMBZ6V2AL
VRWM = 3 V
-
5
200
nA
MMBZ6V8AL
VRWM = 4.5 V
-
10
300
nA
MMBZ9V1AL
VRWM = 6 V
-
5
100
nA
MMBZ10VAL
VRWM =6.5 V
-
1
20
nA
MMBZ12VAL
VRWM = 8.5 V
-
0.1
5
nA
MMBZ15VAL
VRWM =12V
-
0.1
5
nA
MMBZ18VAL
VRWM =14.5V
-
0.1
5
nA
MMBZ20VAL
VRWM =17V
-
0.1
5
nA
MMBZ27VAL
VRWM =22V
-
0.1
5
nA
MMBZ33VAL
VRWM =26V
-
0.1
5
nA
VBR
breakdown voltage
MMBZ5V6AL
IR = 20 mA
5.32
5.6
5.88
V
MMBZ6V2AL
IR = 1 mA
5.89
6.2
6.51
V
MMBZ6V8AL
IR = 1 mA
6.46
6.8
7.14
V
MMBZ9V1AL
IR = 1 mA
8.65
9.1
9.56
V
MMBZ10VAL
IR = 1 mA
9.5
10
10.5
V
MMBZ12VAL
IR = 1 mA
11.4
12
12.6
V
MMBZ15VAL
IR = 1 mA
14.25 15
15.75 V
MMBZ18VAL
IR = 1 mA
17.1
18
18.9
V
MMBZ20VAL
IR = 1 mA
19
20
21
V
MMBZ27VAL
IR = 1 mA
25.65 27
28.35 V
MMBZ33VAL
IR = 1 mA
31.35 33
34.65 V



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