DS-IX4351NE-R01

www.ixysic.com

1

Features

selectable negative gate drive bias

Applications

IX4351 Functional Block Diagram

Description

The IX4351NE is designed specifically to drive SiC

MOSFETs and high power IGBTs. Separate 9A

source and sink outputs allow for tailored turn-on and

turn-off timing while minimizing switching losses. An

internal negative charge regulator provides a

selectable negative gate drive bias for improved dV/dt

immunity and faster turn-off.

Desaturation detection circuitry detects an over

current condition of the SiC MOSFET and initiates a

soft turn off, thus preventing a potentially damaging

dV/dt event. The logic input is TTL and CMOS

compatible; this input does not need to be level shifted

even with a negative gate drive bias voltage.

Protection features include UVLO and thermal

shutdown detection. An open drain FAULT output

signals a fault condition to the microcontroller.

The IX4351NE is rated for operational temperature

range of -40°C to +125°C,and is available in a

thermally enhanced 16-pin power SOIC package.

Ordering Information

Charge

Pump

Control

Gate and

Control

Logic

4.6V

Regulator

IN

FAULT

V

DD

V

REG

SET

GND

COM

CAP

V

DD

2.6V

INSOFT

V

SS

OUTSOFT

V

SS

OUTSNK

OUTSRC

V

DD

DESAT

6.8V

V

DD

15

10

2

3

4

1

16

14

13

12

11

7

5

6

8

9

V

DD

V

SS

Part

Description

IX4351NE

16-Pin power SOIC with exposed thermal pad.

In tubes (50/Tube)

IX4351NETR

16-Pin power SOIC with exposed thermal pad.

In Tape & Reel (2000/Reel)

IX4351NE

9A Low Side SiC

MOSFET & IGBT Driver