IX4351NE

R01

www.ixysic.com

7

2

Functional Description

The IX4351NE is designed to provide the gate drive

for high power SiC MOSFETs and IGBTs.

Figure 1. IX4351NE Typical Application Circuit

2.1 Logic Input (IN)

The logic input IN controls the state of the high current

source driver output (OUTSRC), high current sink

driver output (OUTSNK), and a lower current sink

driver output (OUTSOFT). The IN input is a

high-speed Schmitt trigger buffer with 0.4V hysteresis.

The IN logic thresholds are TTL and CMOS

typically 12V) IN controls the state of the gate driver

outputs according to Table 1:

2.1.1 Table 1

2.2 Gate Drive Outputs (OUTSRC and OUTSNK)

The IX4351NE power outputs are rated for 9A peak

current capability. Separate source and sink outputs

allow independent adjustment of the discrete SiC

MOSFET or IGBT turn-on and turn-off transactions

with a single resistor. An internal dead time prevents

the cross conduction of the source and sink outputs.

2.3 4.6 Volt Regulator (VREG)

The internal 4.6V regulator provides power for the low

voltage control circuitry. An external 4.7

F bypass

10mA, and can be used to set the negative bias

voltage and power an external logic optocoupler.

IN

FAULT

VREG

SET

GND

COM

CAP

INSOFT

OUTSOFT

V

SS

OUTSNK

OUTSRC

V

DD

DESAT

R

DESAT

C

BLANK

C

DD

+22V

RH

RL

R

SOFT

C

REG

C

FLY

C

SS

DRAIN

SOURCE

GATE

Controller

R1

R2

V

SS

Charge

Pump

Control

Gate and

Control

Logic

4.6V

Regulator

V

DD

V

DD

2.6V

V

SS

6.8V

V

DD

D1

R

FLY

4

2

3

1

16

15

10

14

13

12

11

7

9

8

6

5

IN

OUTSRC

OUTSNK

OUTSOFT

X

Off

Low

Low

0

Off

Low

Low

1

High

Off

Off