BULT116D

MEDIUM VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

PRELIMINARY DATA

s

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

COMPACT FLUORESCENT LAMPS UP TO

23 W AT 110 V A.C. MAINS

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

AT 110 V A.C. MAINS

DESCRIPTION

The device is manufactured using Multi Epitaxial

Planar technology for high switching speeds and

medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

February 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

400

V

200

V

9

V

Collector Current

5

A

10

A

Base Current

2

A

4

A

W

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

3

2

1

SOT-32

®

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