BULT116D datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

2.78

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 400 V

Tc = 125

100

500

µA

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

200

ICEO

Collector Cut-off

Current

(IB = 0)

VCE = 200 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

IC = 1 A

IB = 0.1 A

IC = 3 A

IB = 0.6 A

IC = 5 A

IB = 1 A

0.25

0.4

0.7

1.2

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 1 A

IB = 0.1 A

IC = 5 A

IB = 1 A

1.1

1.5

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 5 A

VCE = 5 V

820

RESISTIVE LOAD

Rise Time

Fall Time

Storage Time

VCC = 125 V

IC = 2 A

IB1 = 0.4 A

IB2 = -0.4 A

tp = 30

µs

(see figure 2)

0.2

1.4

0.4

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE = -5 V

L = 500

µH

Vclamp = 180 V

(see figure 1)

0.5

0.1

µs

Diode Forward Voltage IC = 2 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

BULT116D

2/6

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