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STM32MP151AAB3 数据表(PDF) 150 Page - STMicroelectronics |
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STM32MP151AAB3 数据表(HTML) 150 Page - STMicroelectronics |
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150 / 253 page ![]() Electrical characteristics STM32MP151A/D 150/253 DS12500 Rev 3 4 MHz low-power internal RC oscillator (CSI) 32 kHz low-speed internal (LSI) RC oscillator 6.3.11 PLL characteristics The parameters given in Table 38, Table 39, Table 40 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. Table 36. CSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fCSI(2) CSI frequency VDD = 3.3 V, TJ = 30 °C 3.98 4 4.02 MHz TRIM Trimming step Trimming code is not a multiple of 16 -0.85 1 % Trimming code is a multiple of 16 - -1.65 - - DuCy(CSI) Duty Cycle - 45 - 55 % ∆VDD (CSI) + ∆TEMP (CSI)(3) CSI oscillator frequency drift over VDD & drift over temperature VDD = 1.71 to 3.6 V TJ = 0 to 85 °C - ±1.43 - % tsu(CSI) CSI oscillator startup time - - 1.5 2.4 µs tstab(CSI) CSI oscillator stabilization time (to reach ±5% of fCSI) TJ = 0 to 85 °C - 5 - cycle IDD(CSI) CSI oscillator power consumption - - 30 - µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization results. Table 37. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency TJ = 30 °C,(2) VDD = 3.3 V 31.4 32 32.6 kHz TJ = -40 to 125 °C, VDD = 1.71 to 3.6 V 29 32 33.6 tsu(LSI) LSI oscillator startup time (Time between Enable rising and First output clock edge.) - - 64 125 µs tstab(LSI) LSI oscillator stabilization time (5% of final value) -- 110 170 IDD(LSI) LSI oscillator power consumption - - 120 230 nA 1. Guaranteed by design. 2. Guaranteed by test in production. |
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