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STM32MP151AAB3 数据表(PDF) 149 Page - STMicroelectronics

部件名 STM32MP151AAB3
功能描述  Arm® Cortex®-A7 800 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog
PDF  253 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP151AAB3 数据表(HTML) 149 Page - STMicroelectronics

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DS12500 Rev 3
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STM32MP151A/D
Electrical characteristics
232
6.3.9
External clock source security characteristics
6.3.10
Internal clock source characteristics
The parameters given in Table 35, Table 36 and Table 37 are derived from tests performed
under ambient temperature and VDD supply voltage conditions summarized in Table 13:
General operating conditions.
64 MHz high-speed internal RC oscillator (HSI)
Table 34. High-speed external user clock security system (HSE CSS)(1)
1. Guaranteed by design.
Symbol
Parameter
Min
Typ
Max
Unit
tDCM(HSE_CSS)
Time to detect clock missing
-
2
-
μs
tDCP(HSE_CSS)
Time to detect clock presence
-
-
250
ns
IVDD(HSE_CSS)
Power consumption (fHSE = 48 MHz)
-
-
50
μA
Table 35. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI(2)
HSI frequency
VDD = 3.3 V, TJ = 30 °C
63.7
64
64.3
MHz
TRIM
HSI user trimming step
Trimming is not a multiple
of 32
-
0.24
0.33
%
Trimming is 128, 256 and
384
-
-2.43
-
Trimming is 64, 192, 320
and 448
-
-0.70
-
Other trimming are a
multiple of 32 (not
including multiple of 64
and 128)
-
-0.30
-
DuCy(HSI)
Duty Cycle
-
45
-
55
%
ΔVDD (HSI)
HSI oscillator frequency drift over VDD
(reference is 3.3 V)
VDD = 1.71 to 3.6 V
-0.12
-
0.03
%
ΔTEMP (HSI)(3)
HSI oscillator frequency drift over
temperature after factory calibration
TJ = -20 to 110 °C
-1.25
-
0.75
%
TJ = -40 to 125 °C
-1.75
-
0.95
tsu(HSI)
HSI oscillator start-up time (Time
between Enable rising and First output
clock edge.)
-
-
1.47
2
µs
tstab(HSI)
HSI oscillator stabilization time
at 1% of target frequency
-3
-
µs
IDD(HSI)
HSI oscillator power consumption
-
-
300
400
µA
1. Guaranteed by design unless otherwise specified.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.



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