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STM32MP151AAB3 数据表(PDF) 149 Page - STMicroelectronics |
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STM32MP151AAB3 数据表(HTML) 149 Page - STMicroelectronics |
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149 / 253 page ![]() DS12500 Rev 3 149/253 STM32MP151A/D Electrical characteristics 232 6.3.9 External clock source security characteristics 6.3.10 Internal clock source characteristics The parameters given in Table 35, Table 36 and Table 37 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. 64 MHz high-speed internal RC oscillator (HSI) Table 34. High-speed external user clock security system (HSE CSS)(1) 1. Guaranteed by design. Symbol Parameter Min Typ Max Unit tDCM(HSE_CSS) Time to detect clock missing - 2 - μs tDCP(HSE_CSS) Time to detect clock presence - - 250 ns IVDD(HSE_CSS) Power consumption (fHSE = 48 MHz) - - 50 μA Table 35. HSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI(2) HSI frequency VDD = 3.3 V, TJ = 30 °C 63.7 64 64.3 MHz TRIM HSI user trimming step Trimming is not a multiple of 32 - 0.24 0.33 % Trimming is 128, 256 and 384 - -2.43 - Trimming is 64, 192, 320 and 448 - -0.70 - Other trimming are a multiple of 32 (not including multiple of 64 and 128) - -0.30 - DuCy(HSI) Duty Cycle - 45 - 55 % ΔVDD (HSI) HSI oscillator frequency drift over VDD (reference is 3.3 V) VDD = 1.71 to 3.6 V -0.12 - 0.03 % ΔTEMP (HSI)(3) HSI oscillator frequency drift over temperature after factory calibration TJ = -20 to 110 °C -1.25 - 0.75 % TJ = -40 to 125 °C -1.75 - 0.95 tsu(HSI) HSI oscillator start-up time (Time between Enable rising and First output clock edge.) - - 1.47 2 µs tstab(HSI) HSI oscillator stabilization time at 1% of target frequency -3 - µs IDD(HSI) HSI oscillator power consumption - - 300 400 µA 1. Guaranteed by design unless otherwise specified. 2. Guaranteed by test in production. 3. Guaranteed by characterization results. |
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