1812SMS-R10JLC datasheet(2/20 Pages) NXP

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RF Device Data

NXP Semiconductors

MRFX600H MRFX600HS MRFX600GS

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +179

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Storage Temperature Range

Tstg

– 65to+150

C

Case Operating Temperature Range

–40 to +150

C

Operating Junction Temperature Range (1,2)

–40 to +225

C

Total Device Dissipation @ TC =25C

Derate above 25C

1333

6.67

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

CW: Case Temperature 75C, 650 W CW, 62 Vdc, IDQ(A+B) = 250 mA, 98 MHz

RJC

0.15

C/W

Thermal Impedance, Junction to Case

Pulse: Case Temperature 73C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle,

65 Vdc, IDQ(A+B) = 100 mA, 230 MHz

ZJC

0.037

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Class 2, passes 2500 V

Charge Device Model (per JS--002--2014)

Class C3, passes 1000 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID = 100 mAdc)

V(BR)DSS

179

193

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 179 Vdc, VGS =0 Vdc)

IDSS

—

100

Adc

On Characteristics

Gate Threshold Voltage (4)

(VDS =10 Vdc, ID = 277 Adc)

VGS(th)

2.1

2.5

2.9

Vdc

Gate Quiescent Voltage

(VDD =65 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

2.7

2.9

3.2

Vdc

Drain--Source On--Voltage (4)

(VGS =10 Vdc, ID =0.74 Adc)

VDS(on)

—

0.2

—

Vdc

Forward Transconductance (4)

(VDS =10 Vdc, ID =32 Adc)

gfs

—

33.6

—

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Each side of device measured separately.

(continued)

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