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1812SMS-R10JLC 数据表(PDF) 11 Page - NXP Semiconductors

部件名 1812SMS-R10JLC
功能描述  RF Power LDMOS Transistors
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

1812SMS-R10JLC 数据表(HTML) 11 Page - NXP Semiconductors

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MRFX600H MRFX600HS MRFX600GS
11
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz, TC =25_C
PRODUCTION TEST FIXTURE
100 mA
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 11. Output Power versus Gate--Source
Voltage at a Constant Input Power
0
400
300
1.5
2.0
2.5
3.0
600
500
Pin =1.4 W
0.5
1.0
Pin, INPUT POWER (dBm) PEAK
48
44
40
30
27
24
15
21
18
52
56
230
610
677
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 12. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PEAK
Figure 13. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
20
18
IDQ(A+B) = 400 mA
26
10
80
60
40
20
30
D
Gps
14
D
TC = –40_C
22
20
18
30
110
0
70
60
50
40
30
20
10
32
80
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency
versus Output Power
16
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain versus Output Power
and Drain--Source Voltage
28
24
22
100
200
300
26
20
30
700
36
60
24
26
28
400
500
Gps
1000
1000
40 V
3.5
16
22
24
28
70
50
30
10
85_C
25_C
25_C
–40_C
18
VDD = 65 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
90
VDD =65 Vdc,IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
VDD =65 Vdc,IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
33
36
100 mA
400 mA
300 mA
200
100
Pin =0.7 W
12
100
0
VDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
300 mA
200 mA
200 mA
100
85_C
16
14
600
700
800
VDD =30 V
50 V
55 V
60 V
65 V
IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle



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