2

RF Device Data

Freescale Semiconductor

MW6IC2015NBR1 MW6IC2015GNBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +6

Vdc

Storage Temperature Range

-65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Final Application

Driver Application

4.3

1.2

4.3

1.3

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two-Tone CW

Power Gain

24

26

—

dB

Power Added Efficiency

PAE

26

28

—

%

Intermodulation Distortion

IMD

—

-30

-27

dBc

Input Return Loss

IRL

—

—

-10

dB

15 W PEP, 1805-1880 MHz, Two-Tone CW, 100 kHz Tone Spacing

Power Gain

—

26

—

dB

Power Added Efficiency

PAE

—

28

—

%

Intermodulation Distortion

IMD

—

-30

—

dBc

Input Return Loss

IRL

—

-10

—

dB

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

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