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CRCW120618R0FKEA 数据表(PDF) 7 Page - NXP Semiconductors

部件名 CRCW120618R0FKEA
功能描述  RF LDMOS Wideband Integrated Power Amplifiers
PDF  28 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

CRCW120618R0FKEA 数据表(HTML) 7 Page - NXP Semiconductors

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MW6IC2015NBR1 MW6IC2015GNBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1930-1990 MHz
10
−80
−30
0.1
7th Order
TWO−TONE SPACING (MHz)
5th Order
3rd Order
−40
−50
−60
1
100
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
−70
VDD = 26 Vdc, Pout = 75 W (PEP)
IDQ1 = 100 mA, IDQ2 = 170 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
30
48
P3dB = 44.8 dBm (30 W)
Pin, INPUT POWER (dBm)
VDD = 26 Vdc
IDQ1 = 100 mA, IDQ2 = 170 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
46
44
42
40
38
15
20
25
Actual
Ideal
10
Figure 10. Pulsed CW Output Power versus
Input Power
P1dB = 44 dBm (25 W)
0
−60
Pout, OUTPUT POWER (WATTS) AVG.
35
−25
30
−30
25
−35
20
−40
5
−50
0.1
10
30
−45
15
Figure 11. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
10
−55
PAE
ACPR
IM3
VDD = 26 Vdc
IDQ1 = 100 mA, IDQ2 = 170 mA
f1 = 1955 MHz, f2 = 1965 MHz
2−Carrier W−CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
Gps
1
30
22
32
0.1
0
50
TC = −30_C
25
_C
85
_C
−30
_C
25
_C
85
_C
10
1
30
28
26
24
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Power Added
Efficiency versus CW Output Power
PAE
VDD = 26 Vdc
IDQ1 = 100 mA
IDQ2 = 170 mA
f = 1960 MHz
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain versus Output Power
IDQ1 = 100 mA
IDQ2 = 170 mA
f = 1840 MHz
VDD = 20 V
28 V
30 V
30
18
30
020
28
24
22
26
20
510
15
26 V
25



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