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PIMD2 数据表(PDF) 2 Page - NXP Semiconductors |
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PIMD2 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 10 page ![]() 2004 Apr 21 2 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 22 k Ω, R2 = 22 kΩ PEMD2; PIMD2; PUMD2 FEATURES • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − 50 V IO output current (DC) − 100 mA TR1 NPN (PIMD2: PNP) −−− TR2 PNP (PIMD2: NPN) −−− R1 bias resistor 22 − k Ω R2 bias resistor 22 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE PNP/PNP COMPLEMENT NPN/NPN COMPLEMENT PHILIPS EIAJ PEMD2 SOT666 − D4 PEMB1 PEMH1 PIMD2 SOT457 SC-74 M5 −− PUMD2 SOT363 SC-88 D*2(1) PUMB1 PUMH1 |
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