INA180A2IDBVT datasheet(7/51 Pages) TI1

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INA180, INA2180, INA4180

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SBOS741G – APRIL 2017 – REVISED APRIL 2020

Product Folder Links: INA180 INA2180 INA4180

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.

(3)

Input voltage at any pin can exceed the voltage shown if the current at that terminal is limited to 5 mA.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, VS

Analog inputs, IN+, IN– (2)

Differential (VIN+) – (VIN–)

–26

Common-mode (3)

GND – 0.3

Output Voltage

GND – 0.3

VS + 0.3

Maximum output current, IOUT

Operating free-air temperature, TA

–55

150

°C

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

MIN

MAX

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCM

Common-mode input voltage (IN+ and IN–)

–0.2

Operating supply voltage

2.7

5.5

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC (1)

INA180

INA2180

INA4180

UNIT

DBV (SOT23)

DSG

(WSON)

DGK (VSSOP)

PW (TSSOP)

5 PINS

8 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

197.1

74.9

177.9

115.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

95.8

90.8

65.6

44.3

°C/W

RθJB

Junction-to-board thermal resistance

53.1

40.8

99.3

59.2

°C/W

ψJT

Junction-to-top characterization parameter

23.4

3.7

10.5

4.7

°C/W

ψJB

Junction-to-board characterization parameter

52.7

40.8

97.9

58.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

16.8

N/A

°C/W

INA180A2IDBVT 数据表(PDF) 7 Page - Texas Instruments

INA180A2IDBVT 数据表(HTML) 7 Page - Texas Instruments

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INA180A2IDBVT 数据表(PDF) 7 Page - Texas Instruments

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