STF40NF06 datasheet(2/9 Pages) STMICROELECTRONICS

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STF40NF06

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Table 3: Absolute Maximum ratings

(1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX..

(2) Starting Tj=25°C, ID=20A, VDD=30V

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Off

Table 6: On

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

± 20

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

EAS (2)

Single Pulse Avalanche Energy

250

VISO

Insulation Withstand Voltage (DC)

2500

Tstg

Storage Temperature

–55 to 175

°C

Operating Junction Temperature

Rthj-case

Thermal Resistance Junction-case Max

5.0

°C/W

Maximum Lead Temperature For Soldering Purpose

275

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS= Max Rating, TC= 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 11.5 A

0.024

0.028

Ω

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