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STF40NF06 数据表(PDF) 3 Page - STMicroelectronics |
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STF40NF06 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 3/9 STF40NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On Table 9: Switching Off Table 10: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 30 V ID =11.5A 12 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 920 225 80 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30V, ID = 20A RG =4.7Ω VGS = 10V (see Figure 16) 27 11 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48V, ID = 10A, VGS = 10V 32 6.5 15 43 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30V, ID = 20A, RG=4.7Ω, VGS = 10V (see Figure 16) 27 11 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 23 A ISDM (2) Source-drain Current (pulsed) 92 A VSD (1) Forward On Voltage ISD = 23A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40A, di/dt = 100A/µs, VDD = 10V, Tj = 150°C (see test circuit, Figure 5) 63 150 4.8 ns nC A |
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