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STF40NF06 数据表(PDF) 3 Page - STMicroelectronics

部件名 STF40NF06
功能描述  N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF40NF06 数据表(HTML) 3 Page - STMicroelectronics

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STF40NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
Table 10: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 30 V
ID =11.5A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
920
225
80
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30V, ID = 20A
RG =4.7Ω VGS = 10V
(see Figure 16)
27
11
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48V, ID = 10A,
VGS = 10V
32
6.5
15
43
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30V, ID = 20A,
RG=4.7Ω, VGS = 10V
(see Figure 16)
27
11
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
23
A
ISDM (2)
Source-drain Current (pulsed)
92
A
VSD (1)
Forward On Voltage
ISD = 23A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40A, di/dt = 100A/µs,
VDD = 10V, Tj = 150°C
(see test circuit, Figure 5)
63
150
4.8
ns
nC
A



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