 2017 Microchip Technology Inc.

DS20005724A-page 3

TC6321

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Operating and Storage Temperature.......................................................................................................-55°C to +175°C

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

DC Parameters (Note 1)

Drain-to-Source Breakdown

Voltage

200

—

—

V

Gate Threshold Voltage

1.0

—

2.0

V

Temperature

—

—

–4.5

mV/ºC

(Note 2)

Gate-to-Source Shunt Resistor

10

—

50

kΩ

Gate-to-Source Zener Voltage

13.2

—

25

V

Zero Gate Voltage Drain

Current

—

—

10.0

——

1.0

mA

On-State Drain Current

1.0

—

—

A

2.0

—

—

Static Drain-to-Source On-State

Resistance

——

8.0

Ω

——

7.0

Temperature

——

1.0

%/ºC

(Note 2)

AC Parameters (Note 2)

Forward Transconductance

400

—

—

Input Capacitance

——

110

pF

f = 1.0 MHz

Common Source Output

Capacitance

——

60

Reverse Transfer Capacitance

——

23

Turn-On Delay Time

——

10

ns

Rise Time

——

15

Turn-Off Delay Time

——

20

Fall Time

——

15

Note 1:

Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty

cycle.

2:

Specification is obtained by characterization and is not 100% tested.