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TC6321 数据表(PDF) 5 Page - Microchip Technology |
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TC6321 数据表(HTML) 5 Page - Microchip Technology |
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5 / 26 page ![]() 2017 Microchip Technology Inc. DS20005724A-page 5 TC6321 Diode Parameters Diode Forward Voltage Drop VSD — — –1.8 V VGS= 0V, ISD= –500 mA (Note 1) Reverse Recovery Time trr —100 — ns VGS = 0V, ISD = –500 mA diF/dt = -25 A/µs (Note 2) TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Operating Temperature TJ –40 — +150 °C Storage Temperature TA –55 — +175 °C Thermal Package Resistances Thermal Resistance, 6x5 mm VDFN-8LD JC — 1.43 — °C/W JA —34.4— °C/W P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS (CONTINUED) Unless otherwise noted, TA = TJ = +25°C. Parameter Sym. Min. Typ. Max. Unit Condition Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. |
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