PRELIMINARY

FPD2000AS

Phone: +1 408 850-5790

http:// www.filcs.com

Revised: 05/03/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

PERFORMANCE (1.8 GHz)

♦ 46 dBm Output IP3

♦ 10V Operation

♦ 50% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Design Data Available on Website

♦ Usable Gain to 4GHz

•

DESCRIPTION AND APPLICATIONS

The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount

package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

32

33

dBm

Power Gain at dB Gain Compression

12.5

14.0

Maximum Stable Gain

MSG

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

45

%

IP3

-47

-44

dBc

Saturated Drain-Source Current

975

1150

1325

mA

Maximum Drain-Source Current

1800

mA

Transconductance

1200

mS

Gate-Source Leakage Current

35

85

µA

Pinch-Off Voltage

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

14

16

V

Gate-Drain Breakdown Voltage

20

22

V

Thermal Resistivity (channel-to-case)

See Note on following page

20

°C/W

SEE PACKAGE OUTLINE FOR

MARKING CODE