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FPD2000AS 数据表(PDF) 2 Page - Filtronic Compound Semiconductors

部件名 FPD2000AS
功能描述  2W PACKAGED POWER PHEMT
PDF  7 Pages
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制造商  FILTRONIC [Filtronic Compound Semiconductors]
网页  http://www.filtronic.co.uk/
标志 FILTRONIC - Filtronic Compound Semiconductors

FPD2000AS 数据表(HTML) 2 Page - Filtronic Compound Semiconductors

  FPD2000AS Datasheet HTML 1Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 2Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 3Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 4Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 5Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 6Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 7Page - Filtronic Compound Semiconductors  
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PRELIMINARY
FPD2000AS
2W PACKAGED POWER PHEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 05/03/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 5V to 10V
Quiescent Current:
From 25% IDSS to 55% IDSS
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
12
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward / Reverse current
+15/-2
mA
RF Input Power2
PIN
Under any acceptable bias state
900
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
7.6
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 7.6 - (0.05W/°C) x TPACK
where TPACK = source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
°C source lead temperature: PTOT = 7.6 - (0.05 x (55 – 22)) = 5.95W
For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central
metallized ground pad on the bottom of the package.
Note on Thermal Resistivity: The nominal value of 20
°C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to
the Source leads.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.



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