FPD2000V datasheet(1/3 Pages) FILTRONIC

部件名	FPD2000V

功能描述	2W POWER PHEMT

PDF	3 Pages

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制造商	FILTRONIC [Filtronic Compound Semiconductors]

网页	http://www.filtronic.co.uk/

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1 / 3 page

PRELIMINARY

FPD2000V

2W POWER PHEMT

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 4/29/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

PERFORMANCE (1.8 GHz)

♦ 33 dBm Linear Output Power

♦ 14.5 dB Power Gain

♦ Useable Gain to 10 GHz

♦ 44 dBm Output IP3

♦ 20 dB Maximum Stable Gain

♦ 45% Power-Added Efficiency

♦ 10V Operation / Plated Source Thru-Vias

•

DESCRIPTION AND APPLICATIONS

The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.

The

FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

P1dB

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

32

33

dBm

Power Gain at dB Gain Compression

G1dB

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

13.0

14.5

Maximum Stable Gain

S21/S12

MSG

VDS = 10 V; IDS = 350mA

PIN = 0dBm, 50Ω system

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

45

%

3rd-Order Intermodulation Distortion

ΓS and ΓL tuned for Optimum IP3

IM3

VDS = 10V; IDS = 350 mA

POUT = 22 dBm (single-tone level)

-46

dBc

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

975

1150

1375

mA

Maximum Drain-Source Current

IMAX

VDS = 1.3 V; VGS ≅ +1 V

1800

mA

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

1200

mS

Gate-Source Leakage Current

IGSO

VGS = -3 V

35

85

µA

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 4 mA

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 4 mA

6

8

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 4 mA

20

22

V

Thermal Resistivity

ΘCC

See Note on following page

18

°C/W

DRAIN

BOND

PAD (2X)

GATE

BOND

PAD (2X)

DIE SIZE (

µm): 650 x 800

DIE THICKNESS: 75

µm

BONDING PADS (

µm): >70 x 70

类似零件编号 - FPD2000V

制造商	部件名	数据表	功能描述
Filtronic Compound Semi...	FPD2000AS	281Kb / 7P	2W PACKAGED POWER PHEMT
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	FPD2000AS	381Kb / 10P	2W PACKAGED POWER PHEMT

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