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FPD2000V 数据表(PDF) 2 Page - Filtronic Compound Semiconductors |
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FPD2000V 数据表(HTML) 2 Page - Filtronic Compound Semiconductors |
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2 / 3 page ![]() PRELIMINARY FPD2000V 2W POWER PHEMT Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 4/29/05 Fax: +1 408 850-5766 Email: sales@filcsi.com • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS -3V < VGS < +0V 12 V Gate-Source Voltage VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V IDSS mA Gate Current IG Forward or reverse current +15/-2 mA RF Input Power2 PIN Under any acceptable bias state 900 mW Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage -40 150 ºC Total Power Dissipation PTOT See De-Rating Note below 8.5 W Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits3 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib. • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Absolute Maximum Power Dissipation to be de-rated as follows above 22 °C: PTOT= 8.5W – (0.056W/°C) x THS where THS = heatsink or ambient temperature above 22°C Example: For a 85 °C heatsink temperature: PTOT = 8.5W – (0.056 x (85 – 22)) = 4.9W • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.. • ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290 °C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage temperature should be 250-260 °C. |
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