LPB8917DT0AG

P-Channel 150-V (D-S) MOSFET

Leshan Radio Company, LTD.

2/6

Gate Threshold Voltage

(VDS =VGS , ID =-250μA)

Gate Leakage Current

(VDS =0V, VGS =±20V)

Zero Gate Voltage Drain Current

(VDS = -120 V, VGS = 0 V)

(VDS = -120 V, VGS = 0 V, TJ = 55°C)

Drain-Source On-Resistance(Note 3)

(VGS = -10 V, ID = -3 A)

(VGS = -6.5 V, ID = -2 A)

Diode Forward Voltage (Note 3)

(IS = -2.1 A, VGS = 0 V)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Resistance

(VDS=0V,VGS=0V,f=1MHz)

3.Pulse test: PW ≤ 300us duty cycle ≤ 2%.

4.Guaranteed by design, not subject to production testing.

Rg

Ω

-

3

-

pF

Coss

-

40

-

Crss

-

30

-

ns

tr

-

5

-

td(off)

-

37

-

tf

(VDS = -30 V, RL

= 7.5 Ω,ID = -4

A,VGEN = -10 V,

RGEN = 6 Ω)

td(on)

-

7

-

-

14

-

(VDS = -15 V,

VGS = 0 V, f = 1

MHz)

Ciss

-

659

-

Dynamic(Note 4)

(VDS=-

30V,VGS=-

10V,ID=-4A)

Qg

-

10

-

nC

Qgs

-

2.8

-

Qgd

-

2.7

-

VSD

V

-

-0.83

-

RDS(ON)

Ω

-

-

0.75

-

-

0.9

-

-

-10

IGSS

-

-

±100

IDSS

µA

-

-

-1

Static

VGS(th)

V

-2

-

Characteristic

Symbol

Min.

Typ.

Max.

Unit

(VGS = 0, ID = -250μA)

V

-150

-

-

VBRDSS

Drain–Source Breakdown Voltage

Rev.D Jun. 2020

nA

-4