| 制造商 | 部件名 | 数据表 | 功能描述 |
 Leshan Radio Company |
LP8233DT1AG
|
701Kb / 5P |
P-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology
|
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LPB8337DT0AG
|
626Kb / 6P |
P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
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LPB8615DT0AG
|
269Kb / 5P |
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
|
|
S-LPB8615DT0AG
|
275Kb / 5P |
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
|
|
S-LPB8619DT0AG
|
524Kb / 6P |
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
|
|
LP4433T1G
|
567Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
|
|
LP4435T1G
|
591Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
|
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LP4437T1G
|
495Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
|
|
LP4565T1G
|
393Kb / 3P |
P-Channel 60-V (D-S) MOSFET Low rDS(on) trench technology
|
|
LPB2680LT1G
|
912Kb / 5P |
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
|