STS3DPF60L datasheet(2/9 Pages) STMICROELECTRONICS

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STS3DPF60L

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Table 3: Absolute Maximum ratings

(

•) Pulse width limited by safe operating area.

Table 4: Thermal Data

(*)

When Mounted on 1 inch2 FR-4 board, 2 oz of Cu t

≤ 10 s

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

± 16

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

1.9

IDM(•)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Tstg

Storage Temperature

-55 to 150

°C

Operating Junction Temperature

Rthj-amb

(*)Thermal Resistance Junction-ambient

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating ,TC= 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

1.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 1.5 A

VGS = 4.5 V, ID = 1.5 A

0.10

0.130

0.12

0.160

Ω

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