STS3DPF60L datasheet(3/9 Pages) STMICROELECTRONICS

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STS3DPF60L

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Table 7: Source Drain Diode

(*)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

(*)

Forward Transconductance

VDS = 10 V, ID = 3 A

7.2

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V f = 1 MHz VGS = 0

630

121

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 30 V , ID = 1.5 A

RG =4.7 Ω, VGS = 4.5 V

(see Figure 16)

124

14.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD= 48V, ID= 3A VGS=4.5V

(see Figure 19)

11.6

4.5

4.7

15.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

VSD

(*)

Forward On Voltage

ISD = 3 A, VGS = 0

1.2

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 3 A, di/dt = 100A/µs

VDD = 30 V, Tj = 150°C

(see Figure 17)

68.2

3.1

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