GS3ABQ THRU GS3MBQ

2 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S2801

Rev.1.1,15-Jun-20

www.21yangjie.com

PARAMETER

SYMBOL

UNIT

GS3ABQ

GS3BBQ

GS3DBQ

GS3GBQ

GS3JBQ

GS3KBQ

GS3MBQ

Thermal resistance

℃/W

75

1)

20

1)

Note:

(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Number of Cycles

FIG2:Surge Forward Current Capability

8.3ms Single Half Sine Wave

1

10

100

10

1000

100

Resistive or Inductive Load

P.C.B. Mounted on 0.2"×0.2"

(5.0mm×5.0mm)Copper Pad Areas

Lead Temperature(℃)

0

40

80

120

160

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.01

0.1

1

10

100

FIG.3:Typical Forward Characteristics

Instantaneous Forward Voltage(V)

20

40

60

80

100

0.001

0.01

0.1

1

10

100

FIG.4:Typical Reverse Characteristics

Percent of Rated Reverse Voltage（%）

℃

Pulse width=300us

1% duty cycle

℃

℃

℃