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SARA-R412M 数据表(PDF) 27 Page - u-blox AG

部件名 SARA-R412M
功能描述  LTE Cat M1 / NB1 and EGPRS modules
PDF  43 Pages
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制造商  U-BLOX [u-blox AG]
网页  https://www.u-blox.com/
标志 U-BLOX - u-blox AG

SARA-R412M 数据表(HTML) 27 Page - u-blox AG

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SARA-R4 series - Data sheet
UBX-16024152 - R18
Electrical specifications
Page 27 of 43
4.2.8 PWR_ON pin
Parameter
Min.
Typical
Max.
Unit
Remarks
Internal supply for
PWR_ON Input Signal
1.8
V
The PWR_ON input is pulled up to an internal voltage rail
minus a diode drop: the voltage value present at PWR_ON
input pin is normally 0.8 V typical.
Low-level input
-0.30
0.35
V
Pull-up resistance
150
200
250
k
Internal active pull-up
Input leakage current
-0.20
0.20
µ
A
PWR_ON low time
0.15
3.20
s
Low time to trigger module switch on from power off mode
0.15
3.20
s
Low time to trigger module wake-up from PSM deep sleep
1.50
s
Low time to trigger module switch off
Table 19: PWR_ON pin characteristics
4.2.9 RESET_N pin
Parameter
Min.
Typical
Max.
Unit
Remarks
Internal supply for
RESET_N Input Signal
1.8
V
Low-level input
-0.30
0.63
V
Pull-up resistance
37
k
Internal active pull-up
Input leakage current
-0.20
0.20
µ
A
RESET_N low time
10
s
Low time to trigger module abrupt emergency switch off
Table 20: RESET_N pin characteristics
4.2.10 SIM pins
The SIM pins are a dedicated interface to the external SIM card/chip. The electrical characteristics
fulfill the regulatory specification requirements. The values in Table 21 are for information only.
Parameter
Min.
Typ.
Max.
Unit
Remarks
Low-level input
-0.30
0.2*VSIM
V
High-level input
0.7*VSIM
VSIM+0.3
V
Low-level output
0
0.4
V
Max value at IOL = +2.0 mA
High-level output
0.8*VSIM
VSIM
V
Max value at IOL = +2.0 mA
Internal pull-up resistor on SIM_IO
4.7
k
Internal pull-up to VSIM supply
Input leakage current
-2
2
µ
A
VIN =0 V or VIN =VSIM
Clock frequency on SIM_CLK
4.8
MHz
Table 21: SIM pin characteristics



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