PJM07P20SC datasheet(1/7 Pages) PJSEMI

部件名	PJM07P20SC

功能描述	P-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

网页	http://www.pingjingsemi.com/MainEn/Main.aspx

标志

1 / 7 page

PJM07P20SC

P-Channel Enhancement Mode Power MOSFET

www.pingjingsemi.com

1 / 7

Revison：1.0 Oct-2019

Features



VDS=-20V, ID=-7A,

RDS(on)<40mΩ(Max.)@VGS=-2.5V

RDS(on)<25mΩ(Max.)@VGS=-4.5V



High power and current handing capability



Surface mount package

Application

1.Gate 2.Source 3.Drain

Marking: C27



PWM application



Load switch



Power Management

Absolute Maximum Ratings

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

Drain Current -Continuous

ID

-7

A

Drain Current -Pulsed Note1

IDM

-20

A

Power Dissipation

PD

1.1

W

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

Thermal Characteristics

Parameter

Symbol

Limit

Unit

Thermal Resistance,Junction-to-Ambient Note2

RθJA

114

℃/W

SOT-23-3

1

2

Gate

Source

Schematic Diagram

Drain

3

类似零件编号 - PJM07P20SC

制造商	部件名	数据表	功能描述
Dongguan Pingjingsemi T...	PJM07P20SA	1Mb / 6P	P Enhancement Field Effect Transistor

More results

类似说明 - PJM07P20SC

制造商	部件名	数据表	功能描述
GTM CORPORATION	G2U4407	298Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G3J14	377Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G1333	352Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2301	391Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2303	393Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G3401	308Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI20P02	245Kb / 5P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI405	253Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GJ9585	236Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GM162	365Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET