PJM07P20SC datasheet(2/7 Pages) PJSEMI

2 / 7 page

PJM07P20SC

P-Channel Enhancement Mode Power MOSFET

www.pingjingsemi.com

2 / 7

Revison：1.0 Oct-2019

Electrical Characteristics (TA=25

℃)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Static Charactristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V, VDS=0

±100

Gate Threshold Voltage Note3

VGS(th)

VDS=VGS, ID=-250μA

-0.5

-0.7

-1.2

Drain-Source On-State Resistance

Note3

RDS(on)

VGS=-4.5V, ID=-6A

mΩ

VGS=-2.5V, ID=-5A

Forward Transconductance Note3

gFS

VDS=-5V, ID=-6A

Dynamic Characteristics

Input Capacitance

Ciss

VDS=-9V, VGS=0V,

f=1.0MHz

1200

Output Capacitance

Coss

390

Reverse Transfer Capacitance

Crss

300

Switching Characteristics

Turn-on Delay Time

td(on)

VDD=-6V, ID=-1A ,

RL=6Ω,

VGEN=-4.5V, Rg=6Ω

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

VDS=-6V,

ID=-6A, VGS=-4.5V

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

3.8

Drain-Source Diode Characteristics

Diode Forward Voltage Note3

VSD

VGS=0V, IS=-5A

-1.2

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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