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PJM3402NSC 数据表(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM3402NSC 数据表(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 7 page ![]() Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 30 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.7 - 1.5 V Drain-Source On-State Resistance Note3 RDS(ON) VGS=4.5V, ID=3A - 65 mΩ VGS=10V, ID=4A - 52 mΩ Forward Transconductance Note3 gFS VDS=5V,ID=3.6A 14 - - S Dynamic Characteristics Input Capacitance Ciss VDS=15V,VGS=0V, f=1.0MHz - 235 - pF Output Capacitance Coss - 35 - pF Reverse Transfer Capacitance Crss - 18 - pF Switching Characteristics Turn-on Delay Time td(on) VDD=15V, RL=3.75Ω VGS=10V,RGEN=3Ω - 3.5 - nS Turn-on Rise Time tr - 1.5 - nS Turn-Off Delay Time td(off) - 17.5 - nS Turn-Off Fall Time tf - 2.5 - nS Total Gate Charge Qg VDS=15V,ID=4A, VGS=10V - 10 - nC Gate-Source Charge Qgs - 0.95 - nC Gate-Drain Charge Qgd - 1.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage Note3 VSD VGS=0V,IS=1A - - 1.5 V Diode Forward Current Note2 IS - - 4 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. PJM3402NSC N- Enhancement Mode Field Effect Transistor 2 / 7 www.pingjingsemi.com Revision:1.1 Dec-2018 www.pingjingsemi.com Revision:1.1 Dec-2018 Electrical Characteristics (TA=25℃ unless otherwise noted) - Static Characteristics www.pingjingsemi.com Revision:1.0 May-2019 - - |
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