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PJM3402NSC 数据表(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部件名 PJM3402NSC
功能描述  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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制造商  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
网页  http://www.pingjingsemi.com/MainEn/Main.aspx
标志 PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3402NSC 数据表(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM3402NSC Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3402NSC Datasheet HTML 7Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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background image
PJM3402NSC
N- Enhancement Mode Field Effect Transistor
3 / 7
Typical Characteristics Curves
www.pingjingsemi.com
Revision：1.0 May-2019
5
2
10
0
40
00
22
44
66
88
1100
00
00..55
11
11..55
22
22..55
33
V
V
G
GS
S(
(V
Vo
olltts
s))
F
Fiig
gu
urre
e 2
2:: T
Trra
an
ns
sffe
err C
Ch
ha
arra
ac
ctte
erriis
sttiic
cs
s ((N
No
otte
e E
E))
3300
4400
5500
6600
7700
8800
00
22
44
66
88
1100
II
D
D (
(A
A))
F
Fiig
gu
urre
e 3
3:: O
On
n--R
Re
es
siis
stta
an
nc
ce
e v
vs
s.. D
Drra
aiin
n C
Cu
urrrre
en
ntt a
an
nd
d G
Ga
atte
e
V
Vo
olltta
ag
ge
e ((N
No
otte
e E
E))
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
00..88
11
11..22
11..44
11..66
11..88
00
2255
5500
7755
110000
112255
115500
117755
T
Te
em
mp
pe
erra
attu
urre
e ((°°C
C))
F
Fiig
gu
urre
e 4
4:: O
On
n--R
Re
es
siis
stta
an
nc
ce
e v
vs
s.. J
Ju
un
nc
cttiio
on
n
18TTeem
mp
pe
erra
attu
urre
e
((N
No
otte
e E
E))
VVGGSS==22..55VV
IIDD==22AA
VVGGSS==44..55VV
IIDD==33AA
IIDD==44AA
20
40
60
80
100
120
0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2255°
°
C
C
112255°
°
C
C
VVDDSS==55VV
VVGGSS==44..55VV
VVGGSS==1100VV
ID=4A
25°C
125°C
00
33
66
99
1122
1155
00
11
22
33
44
55
V
V
D
DS
S (
(V
Vo
olltts
s))
F
Fiig
g 1
1:: O
On
n--R
Re
eg
giio
on
n C
Ch
ha
arra
ac
ctte
erriis
sttiic
cs
s ((N
No
otte
e E
E))
VVGGSS==22..00VV
44..55VV
1100VV
33VV
22..55VV
VVGGSS==22..55VV
VGS=10V



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