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AS7C1024B 数据表(PDF) 6 Page - Alliance Semiconductor Corporation

部件名 AS7C1024B
功能描述  5V 128K X 8 CMOS SRAM
PDF  9 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C1024B 数据表(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 6 of 9
®
Write waveform 2 (CE1 and CE2 controlled)10,11,12
AC test conditions
Notes
1
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
2
This parameter is sampled and not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A and B.
4tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500 mV from steady-state voltage.
5
This parameter is guaranteed, but not 100% tested.
6WE is high for read cycle.
7CE1 and OE are low and CE2 is high for read cycle.
8
Address valid prior to or coincident with CE1 transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
tAW
Address
CE1
WE
DOUT
tCW1, tCW2
tWP
tDW
tDH
tAH
tWZ
tWC
tAS
CE2
Data valid
DIN
tWR
– Output load: see Figure B.
– Input pulse level: GND to 3.5V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
168
Thevenin equivalent:
DOUT
+1.728V
255
C13
480
DOUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pulse
2 ns



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