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IS25LP064A-RHLA1 数据表(PDF) 42 Page - Integrated Silicon Solution, Inc

部件名 IS25LP064A-RHLA1
功能描述  3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  99 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LP064A-RHLA1 数据表(HTML) 42 Page - Integrated Silicon Solution, Inc

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IS25LP064A/032A
Integrated Silicon Solution, Inc.- www.issi.com
42
Rev. A
11/06/2015
8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4 Kbyte sector before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire
instruction sequence The SER instruction code, and three address bytes are input via SI. Erase operation will
start immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and
timing.
During an erase operation, all instruction will be ignored except the Read Status Register (RDSR) instruction.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status
Register using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.14 Sector Erase Sequence
Instruction = D7h/20h
23
CE #
SCK
SI
3
2
SO
1
0
3-byte Address
High Impedance
22
21
...
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
Mode 3
Mode 0
Figure 8.15 Sector Erase QPI Sequence
D7h/20h
CE#
SCK
IO[3:0]
3-byte Address
0
1
2
3
4
5
6
7
Mode 3
Mode 0
23:20 19:16 15:12 11:8
7:4
3:0



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