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JS28F256P30T85 数据表(PDF) 47 Page - Intel Corporation

部件名 JS28F256P30T85
功能描述  Intel StrataFlash Embedded Memory
PDF  102 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation

JS28F256P30T85 数据表(HTML) 47 Page - Intel Corporation

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1-Gbit P30 Family
Datasheet
Intel StrataFlash® Embedded Memory (P30)
April 2005
Order Number: 306666, Revision: 001
47
8.3
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power supply current
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks
produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the device enable
charge-pumps, and internal logic states change at high speed. All of these internal activities
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive
and inductive loading. Two-line control and correct de-coupling capacitor selection suppress
transient voltage peaks.
Because Intel
® Multi-Level Cell (MLC) flash memory devices draw their power from VCC, VPP,
and VCCQ, each power connection should have a 0.1 µF ceramic capacitor to ground. High-
frequency, inherently low-inductance capacitors should be placed as close as possible to package
leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor should be
placed between power and ground close to the devices. The bulk capacitor is meant to overcome
voltage droop caused by PCB trace inductance.
Figure 27.
Reset Operation Waveforms
(A) Reset during
read mode
(B) Reset during
program or block erase
P1
≤ P2
(C) Reset during
program or block erase
P1
≥ P2
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RST# [P]
RST# [P]
RST# [P]
Abort
Complete
Abort
Complete
V
CC
0V
V
CC
(D) VCC Power-up to
RST# high
P1
R5
P2
P3
P2
R5
R5



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