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JS28F256P30T85 数据表(PDF) 47 Page - Intel Corporation |
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JS28F256P30T85 数据表(HTML) 47 Page - Intel Corporation |
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47 / 102 page ![]() 1-Gbit P30 Family Datasheet Intel StrataFlash® Embedded Memory (P30) April 2005 Order Number: 306666, Revision: 001 47 8.3 Power Supply Decoupling Flash memory devices require careful power supply de-coupling. Three basic power supply current considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks produced when CE# and OE# are asserted and deasserted. When the device is accessed, many internal conditions change. Circuits within the device enable charge-pumps, and internal logic states change at high speed. All of these internal activities produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and correct de-coupling capacitor selection suppress transient voltage peaks. Because Intel ® Multi-Level Cell (MLC) flash memory devices draw their power from VCC, VPP, and VCCQ, each power connection should have a 0.1 µF ceramic capacitor to ground. High- frequency, inherently low-inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor should be placed between power and ground close to the devices. The bulk capacitor is meant to overcome voltage droop caused by PCB trace inductance. Figure 27. Reset Operation Waveforms (A) Reset during read mode (B) Reset during program or block erase P1 ≤ P2 (C) Reset during program or block erase P1 ≥ P2 V IH V IL V IH V IL V IH V IL RST# [P] RST# [P] RST# [P] Abort Complete Abort Complete V CC 0V V CC (D) VCC Power-up to RST# high P1 R5 P2 P3 P2 R5 R5 |
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