WSF3013 datasheet(1/10 Pages) WIINSOK

部件名	WSF3013

功能描述	N-Ch and P-Channel MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

网页	http://www.winsok.tw/index.html

标志

1 / 10 page

Rating

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

30

-

30

V

VGS

Gate-Source Voltage

±

20

±

20

V

ID

Continuous Drain Current,

VGS(NP)=10V,Ta=25℃

12*

-

11.5

A

Continuous Drain Current,

VGS(NP)=10V,Ta=70℃

7.5

-

9.6

A

48

-

48

A

20

mJ

9

-

9

A

PD

Total Power Dissipation

, Ta=25℃

5.25

W

TSTG

Storage Temperature Range

-55 to 1

75

-55 to 1

75

℃

TJ

Operating Junction Temperature Range

175

℃

60

℃

/W

6.25

℃

/W

BVDSS

RDSON

ID

30V

14mΩ

12A

-

30V

23mΩ

-

11.5A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

CCFL Back-light Inverter

Absolute Maximum Ratings

TO-252-4L Pin Configuration

Product Summery

The WSF3013 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the synchronous buck

converter applications .

The WSF3013 meet the RoHS and Green

Product requirement 100% EAS guaranteed

with full function reliability approved.

WSF3013

N-Ch and P-Channel MOSFET

Page 1

www.winsok.tw

Dec.2014

S1

G1

S2

G2

D1

D2

G1

S1

D1

(1)

(2)

(3)

G2

S2

D2

(3)

(5)

(4)

Avalanche Current, Single pulse

,

L=0.5mH

Avalanche Energy, Single pulse

,

L=0.5mH

Pulse Drain Current Tested

, VGS(NP)=10V

IDP

a

IAS

c

EAS

c

RqJA

b

Thermal Resistance-Junction to Ambient

,Steady State

RqJC

Thermal Resistance-Junction to Case

,Steady State

Note *：Max. current is limited by bonding wire.

Note a：Pulse width limited by max. junction temperature.

Note b：RqJA steady state t=999s. RθJA is measured with the device mounted on 1in

2, FR-4 board with 2oz. Copper.

Note c：UIS tested and pulse width limited by maximum junction temperature 175

oC (initial temperature Tj=25oC).

类似零件编号 - WSF3013

制造商	部件名	数据表	功能描述
Shenzhen Guan Hua Wei Y...	WSF30100	806Kb / 5P	N-Ch MOSFET
	WSF30100D	1Mb / 5P	High Frequency Point-of-Load Synchronous Buck Converter
	WSF3012	2Mb / 6P	N-Ch and P-Channel MOSFET
	WSF30150	1Mb / 5P	Battery protection, Load switch
	WSF30160	928Kb / 5P	N-Ch MOSFET

More results

类似说明 - WSF3013

制造商	部件名	数据表	功能描述
KEC(Korea Electronics)	KMB6D0NP40QA	867Kb / 8P	N and P-Ch Trench MOSFET
KEC(Korea Electronics)	KMB7D0NP30QA	400Kb / 9P	N and P-Ch Trench MOSFET
Shenzhen Guan Hua Wei Y...	WSD3045DN	839Kb / 11P	N-Ch and P-Channel MOSFET
	WSF3012	2Mb / 6P	N-Ch and P-Channel MOSFET
	WSF4012	1Mb / 7P	N-Ch and P-Channel MOSFET
	WSP4606	1Mb / 8P	N-Ch and P-Channel MOSFET
	WSP4608	697Kb / 6P	N-Ch and P-Channel MOSFET
	WSP4616	839Kb / 8P	N-Ch and P-Channel MOSFET
	WSP4620	1,019Kb / 8P	N-Ch and P-Channel MOSFET
	WSP4626	1Mb / 8P	N-Ch and P-Channel MOSFET