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WSF3013 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WSF3013
功能描述  N-Ch and P-Channel MOSFET
PDF  10 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF3013 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF3013 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 8Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3013 Datasheet HTML 9Page - Shenzhen Guan Hua Wei Ye Co., Ltd Next Button
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
VGS=10V , ID=8A
---
14
18.5
RDS(ON)d
Static Drain-Source On-Resistance
VGS=4.5V , ID=
5A
---
17
25
m
Ω
VGS(th)
Gate Threshold Voltage
1.
3
1.
8
2.
3
V
VGS=VDS , ID =250uA
VDS=
20V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=
20V , VGS=0V , TJ=85℃
---
---
30
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qge
Total Gate Charge
---
5.2
---
Qgse
Gate-Source Charge
---
1.0
---
Qgde
Gate-Drain Charge
---
2.8
---
nC
Td(on)e
Turn-On Delay Time
---
6
---
Tre
Rise Time
---
8.6
---
Td(off)e
Turn-Off Delay Time
---
16
---
Tfe
Fall Time
---
3.6
---
ns
Cisse
Input Capacitance
---
545
---
Cosse
Output Capacitance
---
95
---
Crsse
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
55
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
---
---
12
A
VG=VD=0V , Force Current
VSDd
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Page 2
www.winsok.tw
Dec.2014
WSF3013
N-Ch and P-Channel MOSFET
Note d：Pulse test ; pulse width
£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
VDD=15V,RL=15R,
IDS=1A,VGEN=10V,
RG=6R.
VDS=15V, VGS=4.5V,
IDS=8A



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