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WST2011 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件名 WST2011
功能描述  Dual P-Ch MOSFET
PDF  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2011 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST2011 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2011 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2011 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2011 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2011 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.011
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-2A
---
8
0
85
m
Ω
VGS=-2.5V , ID=-1A
---
95
1
15
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.5
-
1.0
-
1.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-2A
---
8.5
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-2A
---
3.3
11.3
nC
Qgs
Gate-Source Charge
---
1.1
1.7
Qgd
Gate-Drain Charge
---
1.1
2.9
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-4.5V ,
RG=3.3Ω, ID=-2A
---
7.2
---
ns
Tr
Rise Time
---
9.3
---
Td(off)
Turn-Off Delay Time
---
15.4
---
Tf
Fall Time
---
3.6
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
750
---
pF
Coss
Output Capacitance
---
95
---
Crss
Reverse Transfer Capacitance
---
68
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-
1.0
A
ISM
Pulsed Source Current
2,4
---
---
-1
2
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
.1
V
trr
Reverse Recovery Time
IF=-2A , dI/dt=100A/µs , TJ=25℃
---
19
---
nS
Qrr
Reverse Recovery Charge
---
14
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST2011
Dual P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



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