ASPM34 datasheet(8/16 Pages) ONSEMI

8 / 16 page

NFVA25012NP2T

www.onsemi.com

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BOOTSTRAP DIODE PART (Tj as specified)

Forward Voltage

IF = 1.0 A, TJ = 25°C

−

2.2

−

trr

Reverse−Recovery Time

IF = 1.0 A, dIF / dt = 50 A/ms, TJ = 25°C

−

CONTROL PART (Tj = 25°C unless otherwise noted)

IQDDH

Quiescent VDD Supply

Current

VDD(UH,VH,WH) = 15 V,

IN(UH,VH,WH) = 0 V

VDD(UH) − COM(H),

VDD(VH) − COM(H),

VDD(WH) − COM(H)

−

0.15

IQDDL

VDD(L) = 15 V, IN(UL,VL, WL) = 0 V

VDD(L) − COM(L)

−

4.80

IPDDH

Operating VDD Supply

Current

VDD(UH,VH,WH) = 15 V,

fPWM = 20 kHz, Duty = 50%,

Applied to one PWM Signal Input

for High−Side

VDD(UH) − COM(H),

VDD(VH) − COM(H),

VDD(WH) − COM(H)

−

0.30

IPDDL

VDD(L) = 15V, fPWM = 20 kHz,

Duty = 50%, Applied to one PWM

Signal Input for Low−Side

VDD(L) − COM(L)

−

15.5

IQBS

Quiescent VBS Supply

Current

VBS = 15 V, IN(UH,VH,WH) = 0 V

VB(U) − VS(U),

VB(V) − VS(V),

VB(W) − VS(W)

−

0.30

IPBS

Operating VBS Supply

Current

VDD = VBS = 15 V, fPWM = 20 kHz,

Duty = 50%, Applied to one PWM

Signal Input for High−Side

VB(U) − VS(U),

VB(V) − VS(V),

VB(W) − VS(W)

−

12.0

VFOH

Fault Output Voltage

VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull−up

4.5

−

VFOL

VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull−up

−

0.5

ISEN

Sensing Current of Each

Sense IGBT

VDD = 15 V, VIN = 5 V, RSC = 0 W,

No Connection of Shunt Resistor

at NU,V,W Terminal

IC = 50 A

−

VSC(ref)

Short Circuit Trip Level

VDD = 15 V (Note 8)

CSC − COM(L)

0.43

0.50

0.57

ISC

Short Circuit Current Level

for Trip

RSC = 13 W (±1%), No Connection of Shunt Resistor

at NU,V,W Terminal (Note 8)

−

UVDDD

Supply Circuit

Under−Voltage Protection

Detection Level

10.3

−

12.8

UVDDR

Reset Level

10.8

−

13.3

UVBSD

Detection Level

9.5

−

12.0

UVBSR

Reset Level

10.0

−

12.5

tFOD

Fault−Out Pulse Width

CFOD = Open

(Note 9)

−

CFOD = 2.2 nF

1.7

−

VIN(ON)

ON Threshold Voltage

Applied between IN(UH,VH,WH) − COM(H),

IN(UL,VL,WL) − COM(L)

−

2.6

VIN(OFF)

OFF Threshold Voltage

0.8

−

RTH

Resistance of Thermistor

at TTH = 25°C

See Figure 6

(Note 10)

−

at TTH = 100°C

−

2.9

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

8. Short−circuit current protection functions only at the low−sides because the sense current is divided from main current at low−side IGBTs.

Inserting the shunt resistor for monitoring the phase current at NU, NV, NW terminal, the trip level of the short−circuit current is changed.

9. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:

tFOD = 0.8 x 106 x CFOD [s].

10.TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application.

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