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2SC4081-R 数据表(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

部件名 2SC4081-R
功能描述  NPN Transistor
PDF  4 Pages
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制造商  YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]
网页  http://www.yfwdiode.com/
标志 YFWDIODE - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

2SC4081-R 数据表(HTML) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

  2SC4081-R Datasheet HTML 1Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 2SC4081-R Datasheet HTML 2Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 2SC4081-R Datasheet HTML 3Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 2SC4081-R Datasheet HTML 4Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD  
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2SC4081 SOT-
2 / 4
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
■
Typical Characterisitics
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
VCE
=6V
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2 Grounded emitter output
characteristics ( Ι)
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
IB=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4
8
12
16
4
6
20
IB=0A
Ta=25°C
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( ΙΙ
)
0.2
20
10
0.5 1 2
5 10 20
50 100 200
50
100
200
500
VCE=5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι)
COLLECTOR CURRENT : IC
(mA)
0.2 0.5 1
2
5 10 20
50 100 200
20
10
50
100
200
500
25°C
−55°C
Ta=100°C
VCE=
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ
)
COLLECTOR CURRENT : IC
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR CURRENT : IC
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1
2
5 10 20
50 100 200
IC/IB=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι)
0.2
COLLECTOR CURRENT : IC
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1
2
5 10 20
50 100 200
IC/IB=10
Ta=100°C
25°C
−55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ
)
COLLECTOR CURRENT : IC
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1
2
5 10
20
50 100
IC/IB=50
Ta=100°C
25°C
−55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
−0.5 −1
−2
−5 −10 −20
−50 −100
100
200
500
Ta=25°C
VCE
=6V
EMITTER CURRENT : IE
(mA)



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