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July 2005

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NPN TRANSISTOR

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HIGH VOLTAGE CAPABILITY

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LOW SPREAD OF DYNAMIC PARAMETERS

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MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

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VERY HIGH SWITCHING SPEED

APPLICATIONS

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DEDICATED FOR PFC SOLUTION IN

HALF-BRIDGE VOLTAGE FED TOPOLOGY

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ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use as PFC in high

frequency ballast half Bridge voltage fed topology.

Figure 1: Package

Figure 2: Internal Schematic Diagram

Table 1: Order Codes

1

2

3

TO-220

Part Number

Marking

Package

Packaging

BUL804

BUL804

TO-220

Tube

BUL804

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

Rev. 1