BUL804 datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

BUL804

2/7

Table 2: Absolute Maximum Ratings

Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 µs, duty cycle

≤ 1.5 %.

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

800

VCEO

Collector-Emitter Voltage (IB = 0)

450

VEBO

Emitter-Base Voltage (IC = 0)

Collector Current

ICM

Collector Peak Current (tp < 5ms)

Base Current

IBM

Base Peak Current (tp < 5ms)

Ptot

Total Dissipation at TC = 25 oC

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62.5

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = -1.5 V)

VCE = 800 V

Tj = 125 oC

100

500

µA

VEBO

Emitter-Base Voltage

(IC = 0 )

IE = 10 mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 100 mA

L = 25 mH

450

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 450 V

250

µA

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

0.8

1.2

VBE(sat)* Base-Emitter Saturation

Voltage

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

1.2

1.3

hFE

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 300 V

IC = 2 A

IB1 = 0.4 A

IB2 = -0.4 A

Tp = 30 µs

(see figure 11)

1.8

0.1

2.6

0.25

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0 W

Vclamp = 360 V

(see figure 10)

0.6

0.1

0.2

µs

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